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| Ordering number : ENN7712 2SJ655 2SJ655 Features * * * * P-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Tc=25C Conditions Ratings --100 20 --12 --48 2.0 25 150 --55 to +150 Unit V V A A W W C C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss Conditions ID=--1mA, VGS=0 VDS=-100V, VGS=0 VGS= 16V, VDS=0 VDS=-10V, ID=--1mA VDS=-10V, ID=-6A ID=--6A, VGS=-10V ID=--6A, VGS=-4V VDS=-20V, f=1MHz VDS=-20V, f=1MHz VDS=-20V, f=1MHz Ratings min --100 --1 10 --1.2 9 13 100 136 2090 155 108 136 190 --2.6 typ max Unit V A A V S m m pF pF pF Marking : J655 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 61504QB TS IM TA-3854 No.7712-1/4 2SJ655 Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--50V, VGS=-10V, ID=--12A VDS=--50V, VGS=-10V, ID=--12A VDS=--50V, VGS=-10V, ID=--12A IS=--12A, VGS=0 Ratings min typ 17 95 187 95 41 7 9 --0.88 --1.2 max Unit ns ns ns ns nC nC nC V Package Dimensions unit : mm 2063A 4.5 2.8 Switching Time Test Circuit VIN 10.0 3.2 VDD= --50V 0V --10V VIN ID= --6A RL=8.33 3.5 7.2 16.0 D PW=10s D.C.1% VOUT 18.1 G 1.6 1.2 0.75 2.4 5.6 2SJ655 14.0 P.G 0.7 50 S 2.55 123 2.55 2.4 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML 2.55 2.55 --25 ID -- VDS Tc=25C 0V --8 V --4 --25 ID -- VGS 5C --1.5 --2.0 --2.5 --20 --20 Drain Current, ID -- A Drain Current, ID -- A --15 --15 --10 --10 --5 --5 0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0 0 0 --0.5 --1.0 --25 C 25 C Tc= 7 VGS=--3V 5C --3.0 25C --3.5 Tc= -2 --1 --6 V --4.0 75 C --4.5 VDS= --10V V --5.0 Drain-to-Source Voltage, VDS -- V IT05374 Gate-to-Source Voltage, VGS -- V IT05375 No.7712-2/4 2SJ655 300 RDS(on) -- VGS ID= --6V 250 RDS(on) -- Tc Static Drain-to-Source On-State Resistance, RDS(on) -- m 250 Static Drain-to-Source On-State Resistance, RDS(on) -- m 200 200 150 150 Tc=75C 25C -4 V =V GS , 10V -6 A = -=V GS ID , --6A I D= 100 100 --25C 50 50 0 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 0 --50 --25 0 25 50 75 100 125 150 Gate-to-Source Voltage, VGS -- V 100 yfs -- ID IT05376 --100 7 5 3 2 Case Temperature, Tc -- C IT05377 IF -- VSD VGS=0 Forward Transfer Admittance, yfs -- S 7 5 VDS= --10V Forward Drain Current, IF -- A 3 2 10 7 5 3 2 1.0 7 5 --0.1 --10 7 5 3 2 --0.1 7 5 3 2 2 3 5 7 --1.0 2 3 5 Drain Current, ID -- A 1000 7 7 --10 2 IT05378 --0.01 7 5 3 2 --0.001 --0.3 Tc = C 25 C --25 Tc= C 75 C 25 C --1.0 7 5 3 2 75 --0.6 --25 --0.9 C --1.2 IT05379 SW Time -- ID VDD= --50V VGS= --10V td(off) 5 3 Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V Switching Time, SW Time -- ns 5 3 2 Ciss 2 Ciss, Coss, Crss -- pF 1000 7 5 3 2 100 7 5 3 2 tf tr Coss Crss td(on) 100 7 0 10 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 --5 --10 --15 --20 --25 --30 IT05381 Drain Current, ID -- A --10 --9 IT05380 --100 7 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 Drain-to-Source Voltage, VDS -- V VGS -- Qg ASO Gate-to-Source Voltage, VGS -- V VDS= --50V ID= --12A Drain Current, ID -- A IDP= --48A --8 --7 --6 --5 --4 --3 --2 --1 0 0 5 10 15 20 25 30 35 40 45 ID= --12A <10s 10 10 s 0 s 1m s ms 0m DC s op era Operation in this area tio n is limited by RDS(on). 10 10 --0.1 --1.0 Tc=25C Single pulse 2 3 5 7 --10 2 3 5 Total Gate Charge, Qg -- nC IT05382 Drain-to-Source Voltage, VDS -- V 7 --100 2 IT05383 No.7712-3/4 2SJ655 2.5 PD -- Ta Allowable Power Dissipation, PD -- W 35 PD -- Tc Allowable Power Dissipation, PD -- W 30 2.0 25 1.5 20 1.0 15 10 0.5 5 0 0 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT05384 Case Temperature, Tc -- C IT05385 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2004. Specifications and information herein are subject to change without notice. PS No.7712-4/4 This datasheet has been download from: www..com Datasheets for electronics components. |
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